The process of back grinding a silicon wafer is an example of a physical damage. The grinding wheel erodes this periodic arrangement, causing damage to the silicon wafer’s surface. This damage depends on the grinding wheel used, as smaller particles reduce surface roughness. The following article outlines the steps involved in back grinding a silicon wafer. It also provides information on how to determine the thickness of silicon surfaces after grinding. Ultimately, it helps to make the process more efficient and cost-effective.
Technical aspects of wafer thinning
There are four main methods for wafer thinning: wet chemical etching, dry chemical etching, mechanical grinding, and atmospheric downstream plasma. Each one is appropriate for a different material and process. This article will discuss the differences between these methods, and how they may be used to thin silicon wafers. Also, we will discuss the benefits of each method and describe some of their main features. We will also discuss a few important things to look for when choosing a process for wafer thinning.
The demand for thinned semiconductor wafers is expected to increase as the market for these components grows. According to a recent report, the overall wafer thinning equipment market will grow at a CAGR of 10% through 2025. The main drivers of this market will be memory and CIS components, followed by laser diodes and LEDs.
Reliability of mechanical backgrinding
The process of back grinding a wafer up to 70 um is considered very fragile. A number of critical equipment check items must be considered to ensure reliable wafer back grinding. The paper describes some of these check items, as well as how to minimize breakage risks in this manufacturing process. The results of the research are expected to help future IC manufacturing facilities consider the critical areas that must be considered in their processes.
In order to achieve reliable backgrinding, equipment must be aligned properly and free of clogging and foreign materials. In addition, the equipment must be in good process alignment to eliminate TTV impact on final wafer thickness. Mechanical backgrinding is an effective way to improve wafer reliability. A high-quality backgrinding process can increase wafer productivity by as much as 30%.
Cost-benefit analysis of chemical planarization
One of the most compelling arguments in favor of chemical planarization is the cost-benefit analysis. A cost-benefit analysis of chemical planarization for wafer grinding has been conducted by D. Roy, who conducted an empirical study. He concluded that the cost-effectiveness of chemical planarization is greater than that of mechanical planarization. However, it is still unclear whether the process is actually more efficient than mechanical planarization.
The cost-benefit analysis of chemical planarization uses an objective method to normalize a substrate’s surface prior to planarization. The first step is to identify a representative distance between protrusions on a substrate. The second step involves substantially removing these protrusions from the surface of the substrate. In addition, the cost-benefit analysis of chemical planarization for wafer grinding reveals that this process is more expensive than mechanical planarization.
Measurement of thickness of silicon surface after grinding
The arithmetic mean of the surface roughness profile is called Ra, while the height of the irregularities measured at 10 points is called Rz. The original surface exhibits a rough appearance, with small grooves and embossments. The mechanical sawing process did not produce a smooth surface. This experiment demonstrates the importance of measuring the thickness of the silicon surface after grinding.
Precision grinding and lapping of silicon wafers are required to obtain consistent thicknesses. Any out-of-tolerance thicknesses will reduce yields, increase scrap, and cause costly downtime. Non-contact capacitive displacement measurements of wafers are an essential part of this process, and Lion Precision has been providing non-contact measurement systems for more than 30 years. They are also compatible with vacuum and offer high custom design capabilities.
The TTV of a silicon wafer is one of the most crucial parameters for semiconductor manufacturing. It’s an important metric to measure the quality of semiconductor devices. While it can be laborious to measure the silicon surface after grinding at five different locations, the Stealth Dicing, Inc. silicon wafer total thickness variation measurement tool makes it easy to calculate the value of TTV by analyzing the difference between thickness at various angles.
